FRAM For Security, Smart Cards And RFID Applications – Ramtron and Fujitsu

FRAM PZT Memory Cell
FRAM Memory Cell (Credit – Ramtron)

FRAM (Ferroelectric RAM ) is predominately used for low power, lower density applications such as security cards, smart cards and RFID cards. The technology is also being incorporated as part of processor core silicon for program or data storage.

FRAM operates similar to other RAM technologies, with the advantage of being a non-volatile (NV) memory. It generally has faster access times than other NV memory like FLASH or EEPROM, lower overall power consumption and a much higher number of lifetime read-write cycles.

For comparison, FRAM is up to 500 x faster for writing, 2,500 x less energy used and 10,000 x endurance.

As with other NV technologies, FRAM does not require external power or battery back up to retain its memory settings. These features are what make it ideal for small, embedded applications – especially contactless cards and near-field communication (NFC) devices.

The drawback is that FRAM doesn’t have the memory density found in other technologies, and due to it’s fabrication process it has a higher cost-per-bit in comparison to FLASH.

The science behind FRAM is a silicon structure containing a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O3], commonly referred to as PZT.  The Zr/Ti atoms in the PZT change polarity in an when exposed to an electric field. Since there are only two possible polarities, this implements a binary storage cell. The non-volatility comes from, and long term data retention are due to, the PZT crystal maintaining polarity in the absence of an electric field.

The two dominant vendors for FRAM are Ramtron and Fujitsu .

Ramtron offers devices with either Parallel or Serial data interface. Below is their product offering:

I2C Interface

Part

Density

IDD@max

Max. Speed

Package

Vdd

AEC-Q100

Unique S/N

FM24V10

1Mb

1.0mA

3.4MHz

8-Pin SOIC

2.0 – 3.6V

64-bit

FM24V05

512Kb

1.0mA

3.4MHz

8-Pin SOIC

2.0 – 3.6V

FM24W256

256Kb

400uA

1MHz

8-Pin SOIC

2.7-5.5V

FM24V02

256Kb

1.0mA

3.4MHz

8-Pin SOIC

2.0-3.6V

Grade 3 (-40°C – +85°C)

FM24V01

128Kb

1.0mA

3.4MHz

8-Pin SOIC

2.0-3.6V

Grade 3 (-40°C – +85°C)

FM24C64C

64Kb

400uA

1MHz

8-Pin SOIC

4.5-5.5V

FM24C64B

64Kb

400uA

1MHz

8-Pin SOIC

4.5-5.5V

FM24CL64B-GA

64Kb

340uA

1MHz

8-Pin SOIC

3.0-3.6V

Grade 1

FM24CL64B

64Kb

300uA

1MHz

SOIC8 or DFN8

2.7-3.6V

FM24C16C

16Kb

400uA

1MHz

8-Pin SOIC

4.5-5.5V

FM24CL16B

16Kb

300uA

1MHz

SOIC8 or DFN8

2.7-3.6V

FM24C16B

16Kb

400uA

1MHz

8-Pin SOIC

4.5-5.5V

FM24C04C

4Kb

400uA

1MHz

8-Pin SOIC

4.5-5.5V

FM24C04B

4Kb

400uA

1MHz

8-Pin SOIC

4.5-5.5V

FM24CL04B

4Kb

300uA

1MHz

8-Pin SOIC

2.7-3.6V

 

SPI Interface

Part

Density

IDD@max

Max. Speed

Package

Vdd

AEC-Q100

Unique S/N

FM25V20

2Mb

3mA

40MHz

TDFN8, EIAJ8

2.0-3.6V

FM25H20

2Mb

10mA

40MHz

TDFN8, EIAJ8

2.7-3.6V

FM25V10

1Mb

3mA

40MHz

SOIC8

2.0-3.6V

64-bit

FM25V05

512Kb

3mA

40MHz

SOIC8

2.0-3.6V

FM25V02

256Kb

2.5mA

40MHz

SOIC8 or DFN8

2.0-3.6V

Grade 3

FM25W256

256Kb

2mA

20MHz

8-Pin SOIC

2.7-5.5V

FM25V01

128Kb

2.5mA

40MHz

8-Pin SOIC

2.0-3.6V

Grade 3

FM25640C

64Kb

4.0mA

20MHz

8-Pin SOIC

4.5-5.5V

FM25640B

64Kb

4.0mA

20MHz

8-Pin SOIC

4.5-5.5V

FM25640B-GA

64Kb

1.2mA

4MHz

8-Pin SOIC

4.5-5.5V

Grade 1

FM25CL64B

64Kb

3.0mA

20MHz

SOIC8 or DFN8

2.7-3.6V

FM25CL64B-GA

64Kb

3mA

16MHz

8-Pin SOIC

3.0-3.6V

Grade 1

FM25C160C

16Kb

4.0mA

20MHz

8-Pin SOIC

4.5-5.5V

FM25C160B

16Kb

4.0mA

20MHz

8-Pin SOIC

4.5-5.5V

FM25C160B-GA

16Kb

3mA

15MHz

8-Pin SOIC

4.5-5.5V

Grade 1

FM25L16B

16Kb

3.0mA

20MHz

SOIC8 or DFN8

2.7-3.6V

FM25040C

4Kb

4.0mA

20MHz

8-Pin SOIC

4.5-5.5V

FM25040B

4Kb

4.0mA

20MHz

8-Pin SOIC

4.5-5.5V

FM25040B-GA

4Kb

3mA

14MHz

8-Pin SOIC

4.5-5.5V

Grade 1

FM25L04B

4Kb

3.0mA

20MHz

SOIC8 or DFN8

2.7-3.6V

FM25L04B-GA

4Kb

2mA

10MHz

8-Pin SOIC

3.0-3.6V

Grade 1

 

 Parallel Interface

Part

Access Time

IDD@max

Organization

Package

Vdd

FM23MLD16

60ns

14mA

512K x 16

48-Ball FBGA

2.7-3.6V

FM22L16

55ns

12mA

256K x 16

TSOP-II-44

2.7-3.6V

FM22LD16

55ns

12mA

256K x 16

48-Ball FBGA

2.7-3.6V

FM21L16

60ns

12mA

128K x 16

TSOP-II-44

2.7-3.6V

FM21LD16

60ns

12mA

128K x 16

48-Ball FBGA

2.7-3.6V

FM28V100

60ns

12mA

128K x 8

TSOP-I-32

2.0-3.6V

FM28V020

70ns

12mA

32K x 8

28-pin SOIC, 32-pin TSOP-I

2.0-3.6V

FM18W08

70ns

12mA

32K x 8

28-Pin SOIC

2.7-5.5V

FM1808B

70ns

15mA

32K x 8

28-Pin SOIC

4.5-5.5V

FM16W08

70ns

12mA

8K x 8

28-Pin SOIC

2.7-5.5V

FM1608B

70ns

15mA

8K x 8

28-Pin SOIC

4.5-5.5V

 

Fujitsu offers the following devices :

Part Number

Description

MB85R256FPFCN-G-BNDE1

IC FRAM 256KBIT 150NS 28TSOP

MB85R256FPF-G-BNDE1

IC FRAM 256KBIT 150NS 28SOP

MB85RC128PNF-G-JNE1

IC FRAM 128KBIT 400KHZ 8SOP

MB85RC16PNF-G-JNE1

IC FRAM 16KBIT 1MHZ 8SOP

MB85RC16VPNF-G-JNE1

IC FRAM 16KBIT 400KHZ 8SOP

MB85RC64PNF-G-JNE1

IC FRAM 64KBIT 400KHZ 8SOP

MB85RS128APNF-G-JNE1

IC FRAM 128KBIT 25MHZ 8SOP

MB85RS256APNF-G-JNE1

IC FRAM 256KBIT 25MHZ 8SOP

 

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