300V Power MOSFET Offerings From IR, Fairchild Provide Lowest Rds(on)
Fairchild Semiconductor has long been the market leader for 300V N-Channel MOSFET products, but they are being challenged by new devices from IR (International Rectifier).
These chips are typically used for high efficiency industrial applications such 110-120 VAC line conditioners, 110-120 VAC power supplies, mid-range wattage power supplies, DC to AC inverters, solar panel inverters and Uninterruptible Power Supplies (UPS).
Fairchild uses an advanced “Planar” technology for their transistor geometry, called “UniFET”. They promote this as having lower input and output capacitance and best-in-class reverse recovery for a better Figure of Merit (FOM) (where FOM = Rds(on) * Qg). This similar to their “QFET” process technology.
International Rectifier’s “Hexfet” family of MOSFETs derives it’s name from the hexagonal shape of the transistors used on the silicon die. This geometry allows IR to increase their channel density which provides a lower silicon area for the same power. This translates into a lower cost device as well as improving the Rds(on) characteristics.
The tables below show the RDS(on) (Max) and Qg (Typical) at 10Vgs for comparison.
Fairchild has the following devices in their 300V portfolio:
| Part Number | Description | Qg (Typ) | RDS(on) (Max) | Package |
| FDB28N30TM | N-Channel UniFETTM MOSFET 300V, 28A, 129mΩ | 39nC | 0.129Ω | TO-263 2L (D2PAK) |
| FQP9N30 | N-Channel QFET® MOSFET 250V, 4.4A, 1Ω | 17nC | 0.450Ω | TO-220 3L |
| FQA44N30 | N-Channel QFET® MOSFET 300V, 43.5A, 69mΩ | 120nC | 0.069Ω | TO-3P 3L |
| FQPF22N30 | N-Channel QFET® MOSFET 300V, 12A, 160mΩ | 47nC | 0.160Ω | TO-220F 3L |
| FDB38N30U | N-Channel MOSFET, U-FRFET | 56nC | 0.120Ω | TO-263 2L (D2PAK) |
| FDA38N30 | N-Channel UniFETTM MOSFET 300V, 38A, 85mΩ | 53nC | 0.085Ω | TO-3P 3L |
| FQP22N30 | 300V N-Channel QFET® | 0.160Ω | TO-220 3L | |
| FQP3N30 | 300V N-Channel QFET® | 2.2Ω | TO-220 3L | |
| FDA59N30 | N-Channel UniFETTM MOSFET 300V, 59A, 56mΩ | 77nC | 0.056Ω | TO-3P 3L |
| FQP14N30 | 300V N-Channel QFET® | 0.290Ω | TO-220 3L | |
| FQD7N30 | 300V N-Channel QFET® | 0.700Ω | TO-252 3L (DPAK) | |
| FDB14N30 | N-Channel UniFETTM MOSFET 300V, 14A, 290mΩ | 18nC | 0.290Ω | TO-263 2L (D2PAK) |
| FDPF14N30 | N-Channel UniFETTM MOSFET 300V, 14A, 290mΩ | 18nC | 0.290Ω | TO-220F 3L |
IR has released three devices which are available to purchase at this time.
Pricing for the IRFP4137PBF starts at $1.64 each in 10,000-unit quantities.
| Part Number | Description | Qg (Typ) | RDS(on) (Max) | Package |
| IRFB4137PBF | 300V Single N-Channel HEXFET Power MOSFET, 38A | 83nC | 0.069Ω | TO-220 |
| IRFP4137PBF | 300V Single N-Channel HEXFET Power MOSFET, 38A | 83nC | 0.069Ω | TO-247 |
| IRFP4868PBF | 300V Single N-Channel HEXFET Power MOSFET, 70A | 180nC | 0.032Ω | TO-247 |
300V MOSFETs from IR and Fairchild are industrial grade qualified with moisture sensitivity level 1 (MSL1). Packaging is lead free and are RoHS compliant.
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